Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

In-situ scanning tunneling microscopy of the semiconductor-electrolyte interface

The great reactivity o f semiconductor surfaces and the easy formation o f oxide layers make in-situ STM imaging o f tlie semiconductors/electrolyte interface difficult at a high resolution. Additionally, STM imaging o f such interfaces requires some care as far tunneling conditions are concerned. The paper analyses this question with the system SiINaOH to illustrate the latest advances concern...

Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transfor...

Microscopy, Scanning Tunneling

Ultrafast Scanning Tunneling Microscopy

Scanning Tunneling Microscopy

The invention of the scanning tunneling microscope was a singularity event in the field of surface science and condensed matter physics. The ability to visualize individual atoms in an atomic structure was a huge step forward in experimental development, one for which the inventors were awarded the Nobel Prize in Physics in 1986. While a groundbreaking development, the Scanning Tunneling Micros...